型号 IPI70N10SL-16
厂商 Infineon Technologies
描述 MOSFET N-CH 100V 70A TO262-3
IPI70N10SL-16 PDF
代理商 IPI70N10SL-16
标准包装 500
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 70A
开态Rds(最大)@ Id, Vgs @ 25° C 16 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大) 2V @ 2mA
闸电荷(Qg) @ Vgs 240nC @ 10V
输入电容 (Ciss) @ Vds 4540pF @ 25V
功率 - 最大 250W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 PG-TO262-3
包装 管件
产品目录页面 1619 (CN2011-ZH PDF)
其它名称 SP000225705
同类型PDF
IPI77N06S3-09 Infineon Technologies MOSFET N-CH 55V 77A TO-262
IPI80CN10N G Infineon Technologies MOSFET N-CH 100V 13A TO262-3
IPI80N03S4L-03 Infineon Technologies MOSFET N-CH 30V 80A TO262-3
IPI80N03S4L-04 Infineon Technologies MOSFET N-CH 30V 80A TO262-3
IPI80N04S2-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S2-H4 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S3-03 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S3-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S3-06 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S3-H4 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPI80N04S4-03 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPI80N04S4-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPI80N04S4L-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPI80N06S2-07 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPI80N06S2-08 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPI80N06S2L-05 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPI80N06S2L-11 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPI80N06S3-05 Infineon Technologies MOSFET N-CH 55V 80A TO-262
IPI80N06S3-07 Infineon Technologies MOSFET N-CH 55V 80A TO-262
IPI80N06S3L-05 Infineon Technologies MOSFET N-CH 55V 80A TO-262